Article
  • Raman Spectroscopic Studies of Doped Graphene
  • Kim A, Lee M, Han S, Kang SJ, Song K
  • 라만 분광법을 이용한 그래핀 도핑 연구
  • 김안나, 이몽룡, 한승호, 강성준, 송기국
Abstract
Relations between a peak shift of Raman band and sheet resistance of graphene were investigated when graphene was doped with HNO3. Significant shifts of G band and 2D band as well as an intensity change of 2D band were observed with graphene doping. The shift of Raman graphene bands with doping time exhibit a similar tendency with the change of sheet resistance. The position of 2D band of doped graphene was slowly returned to original undoped state when the doped graphene was stored in atmosphere. However, no peak shift was observed for doped graphene stored in vacuum.

그래핀을 HNO3로 도핑할 때 도핑에 따른 라만 피크의 변화와 그래핀의 면저항 특성과의 관계를 조사하였다. 그래핀을 도핑하면 2D 밴드 피크 세기가 줄어드는 것과 더불어 G 밴드와 2D 밴드의 피크 위치도 현저하게 움직이는 것을 볼 수 있다. 그래핀 라만 밴드들의 도핑에 따른 피크 위치 변화는 그래핀 면저항 값의 변화와 동일하게 나타났다. HNO3로 도핑한 그래핀을 공기 중에 두었을 경우에는 라만 피크 위치가 서서히 도핑 전 상태로 돌아가는데 반하여 진공상태로 보관했을 경우에는 거의 변화가 없었다.

Keywords: graphene; doping; Raman; peak shift; sheet resistance

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  • Polymer(Korea) 폴리머
  • Frequency : Bimonthly(odd)
    ISSN 0379-153X(Print)
    ISSN 2234-8077(Online)
    Abbr. Polym. Korea
  • 2023 Impact Factor : 0.4
  • Indexed in SCIE

This Article

  • 2015; 39(6): 956-960

    Published online Nov 25, 2015

  • 10.7317/pk.2015.39.6.956
  • Received on Jul 7, 2015
  • Accepted on Aug 3, 2015