Article
  • Influence of Activation Temperature on Electrochemical Performances of Styrene-Acrylonitrile Based Porous Carbons
  • Lee JH, Heo GY, Park SJ
  • Styrene-Acrylonitrile 기반 다공성 탄소의 전기화학적 특성에 활성화 온도가 미치는 영향
  • 이지한, 허건영, 박수진
Abstract
In this work, we prepared the carbons from synthesized styrene-acrylonitrile carbon precursor. The prepared carbons were chemically activated, and then the activated SAN-based carbons were named as A-SANs. The activations were carried out at different temperatures to investigate the effect of activation temperature on the surface and electrochemical properties of the activated SAN-based carbons for using as an electrode of electric double layer capacitors (EDLC). The characteristics of A-SAN were determined by X-ray diffraction (XRD), scanning electron microscopy (SEM), surface area and pore size analysis. Also, the electrochemical behaviors were observed by cyclic voltammetry and galvanostatic charge-discharge method. From the results, the A-SAN 700 showed excellent electrochemical property and the highest specific capacitance, but these properties decreased when the activation temperature was above 700 ℃. This is due to the fact that the activation at a temperature over 700 ℃ causes deformation of micropore structures.

본 연구에서는 합성한 styrene-acrylonitrile(SAN) 전구체를 기반으로 한 탄소를 제조하였다. 그 제조된 탄소는 화학적 환원법으로 활성화하였고, 그 활성화된 SAN 기반 탄소를 A-SAN이라 명명하였다. 전기이중층 커패시터의 전극용 A-SAN 기반 탄소의 표면 특성과 전기화학적 특성에 있어서 활성화 온도에 의한 효과를 확인하기 위해 다양한 온도에서 활성화를 진행하였다. A-SAN의 특성분석을 위해 X-선 회절분석법(XRD), 주사전자현미경(SEM) 그리고 비표면적 장치에 의해 조사되었다. 또한 전기화학적 거동은 순환전류전압과 정전류 충방전법으로 측정하였다. 그 실험 결과로부터, A-SAN 700이 우수한 전기화학적 특성과 가장 높은 비축전용량 값을 보였지만, 활성화 온도가 700 ℃가 넘으면 이러한 특성들은 감소했다. 이것은 700 ℃ 이상의 온도에서의 활성화가 마이크로 기공 구조의 변형을 야기하기 때문인 것으로 사료된다.

Keywords: electric double layer capacitors (EDLC); styrene-acrylonitrile (SAN); chemical activation; electrochemical properties.

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  • Polymer(Korea) 폴리머
  • Frequency : Bimonthly(odd)
    ISSN 0379-153X(Print)
    ISSN 2234-8077(Online)
    Abbr. Polym. Korea
  • 2023 Impact Factor : 0.4
  • Indexed in SCIE

This Article

  • 2012; 36(6): 739-744

    Published online Nov 25, 2012

  • Received on May 29, 2012
  • Accepted on Jul 6, 2012