Electroconductivity was to be imparted to Nylon 6 film by introducing Cu
xS, which is known as the p-type semiconductor. The optimum condition of the graft copolymerization and for the introducing of Cu
xS was determined. The morphology of grafted Nylon film and Cu
xS-introduced Nylon film surface was investigated with SEM. From Energy Dispersion X-ray Analysis, x value of Cu
xS was calculated and also degree of dispersion of Cu
xS into the Nylon film was investigated. The degree of crystallinity was calculated by using DSC. And then the tensile strength and modulus of grafted and Cu
xS-introduced Nylon 6 film was investigated. Electrical conductivity of the Cu
xS-introduced Nylon 6 film was 10
-2 S/cm which is higher by order of 10
-l0 than that of the original Nylon 6 film.
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