Article
  • Development and Characterization of Low-Dielectric Polyimide-Based Material with Low-Temperature Curing for High-Frequency Electronic Components
  • Young Bin Cho, Kyungsun Kim, Se-Hoon Park, Yunsik Park, and Hyun Jin Nam

  • ICT Device Packaging Research Center, Korea Electronics Technology Institute, Seongnam 13509, Korea

  • 고주파 소자용 저온 경화형 Polyimide 기반 저유전 소재 개발 및 특성 연구
  • 조영빈 · 김경선 · 박세훈 · 박윤식 · 남현진

  • 한국전자기술연구원 ICT디바이스패키징연구센터

  • Reproduction, stored in a retrieval system, or transmitted in any form of any part of this publication is permitted only by written permission from the Polymer Society of Korea.

Abstract

We have conducted the development of superior high-frequency devices through the development of polyimide with low dielectric constant and dielectric loss values, and the reduction of process time through rapid curing at low temperatures. We induced low-temperature curing through a radical reaction by utilizing peroxide material as a curing agent for polyimide. The cured polyimide film was measured with a coaxial resonator in the frequency range of 28 GHz. The dielectric constant and dielectric loss values of the manufactured polyimide were measured to be 2.48 and 0.00207, respectively. To enhance the dielectric properties of polyimide, porous silica was mixed, and the dielectric constant and dielectric loss values decreased to 2.15 and 0.00164, respectively. Based on these physical property values, we designed a transmission line for simulation and conducted a simulation for impedance matching. As a result, a line width of 265 µm showed the best results. To manufacture this, we applied the manufactured low-dielectric polyimide and polyimide containing silica as dielectric layers to manufacture a copper clad laminate. The manufactured copper clad laminate was patterned into a ground-signal-ground pattern to fabricate a transmission line sample. The s-parameters of the fabricated transmission line were measured with a vector network analyzer. The s11 value of the low-dielectric polyimide was measured to be a minimum of -26.4 dB, and the s21 value was measured to be a maximum of -1.6 dB. In the case of low-dielectric polyimide containing silica, the s11 value was measured to be a minimum of -32 dB, and the s21 value was measured to be a maximum of -0.0979 dB. When silica was included, the initial s11 showed a decreased result of 7%, and s21 showed an excellent result of an increase of 18.4%.


저온에서 빠른 경화를 통해 공정 시간을 단축하고, 낮은 유전율과 유전손실 값의 polyimide 개발을 통해 우수한 고주파 소자 개발을 진행하였다.Polyimide에 과산화물 소재를 경화제로 활용하여 라디칼 반응을 통해 저온경화를 유도하였다. 이렇게 경화된 polyimide film을 주파수 28 GHz 영역의 동축공진기로 측정하였다. 제조된 polyimide의 유전율 값은 2.48, 유전손실 값은 0.00207로 측정되었다. Polyimide의 유전 특성을 증가시키기 위해 다공성 실리카를 혼합하였고, 유전율 값은 2.15, 유전손실 값은 0.00164까지 감소하였다. 위의 물성 값들을 바탕으로 시뮬레이션을 위한 전송선로를 설계하였고, 임피던스 매칭을 위한 시뮬레이션을 진행하였다. 그 결과, 265 μm 선폭이 가장 우수한 결과를 나타냈으며, 이를 제작하기 위해 제작된 저유전 polyimide와 실리카를 포함한 polyimide를 유전층으로 적용하여 copper clad laminate를 제조하였다. 제조된 copper clad laminate을 ground-signal-ground 패턴으로 패터닝하여 전송선로 샘플을 제작하였다. 제작된 전송선로를 vector network analyzer로 s파라미터를 측정하였으며. 저유전 polyimide의 s11 값은 최소 -26.4 dB로 측정되었으며, s21 값은 최대 -1.6 dB로 측정되었고, 실리카가 포함된 저유전 polyimide의 경우 s11 값은 최소 -32 dB, s21 값은 최대 -0.0979 dB로 측정되었다. 실리카가 포함되면 초기대비 s11은 7% 감소한 결과를 보였고, s21은 18.4% 증가한 우수한 결과 값을 얻을 수 있었다.


Keywords: low dielectric material, polyimide, low curing temperature, high frequency.

  • Polymer(Korea) 폴리머
  • Frequency : Bimonthly(odd)
    ISSN 0379-153X(Print)
    ISSN 2234-8077(Online)
    Abbr. Polym. Korea
  • 2023 Impact Factor : 0.4
  • Indexed in SCIE

This Article

  • 2024; 48(4): 395-402

    Published online Jul 25, 2024

  • 10.7317/pk.2024.48.4.395
  • Received on Feb 29, 2024
  • Revised on Apr 17, 2024
  • Accepted on Apr 17, 2024

Correspondence to

  • Hyun Jin Nam
  • ICT Device Packaging Research Center, Korea Electronics Technology Institute, Seongnam 13509, Korea

  • E-mail: hjnam1203@keti.re.kr