Polyaniline film was prepared by electrochemical oxidation of aniline and M/PDP/reduced polyaniline (PA)/Au MIS cells(where, M is either Al or Au) were fabricated by inserting a thin plasma-polymerized Poly(,N,N''- diphenyl-p-phenylene diamine) (PDP) film between polyaniline and a metal. The photovoltaic properties of MIS cells were investigated by using a Xe lamp with an output power density of 13mW/㎠ as a light source ; a power conversion efficiency of 0.2 percent, a open-circuit voltage of 0.42 V, a short-circuit current density of 1.9×10^-7 A /㎠, a fill factor of 0.32 and as ideality factor of 3.0 were estimated for Al/PDP/PA/Au cell. The stability of photovoltaic properties of MIS cell was improved compared with Al/PA/Au MS cells ; the photovoltaic effect disappeared after 6 hours of exposure in air for Al/PA/Au MS cell but a rectifying ratio of 55, initially about 99, and a conversion efficiency of 0.07 percent were held even after 17 hours of exposure for Al/PDP/PA/Au MIS cell.

아닐린을 전기화학적으로 산화시켜 폴리아닐린 필름을 제조하고 폴리아닐린과 금속사이에 프라즈마 중합된 폴리 (N,N''-디페닐-p-페닐렌디아민) (PDP) 박막을 두어 M/PDP/환원상태의 폴리아닐린 (PA)/Au MIS 소자(여기서, M은 알루미늄 혹은 금)를 제조했다. MIS소자의 광기전력 특성은 출력밀도가 13mW/㎠인 Xe램프를 광원으로 사용해서 조사했다;Al/PDP/PA/Au 소자는 에너지 변환효율 0.2퍼센트, 개방단전압 0.42V, 단락광 전류밀도 1.9 x 10^-7A/㎠, 곡선인자 0.32 그리고 이상인자 3.0의 값들을 얻었다. MIS 소자는 Al/PA/Au MS 소자에 비해 안정된 광기전력 특성을 나타내었다; Al/PA/Au MS 소자는 6시간 공기중에 노출시킨 결과 광기전력 효과가 소멸되었으나 Al/PDP/PA/Au MIS 소자는 17시간 공기중에 노출시켜도 정류비 55(노출전 99)와 에너지 변환효율 0.07%를 유지했다.