Electroconductivity was to be imparted to Nylon 6 film by introducing Cu_xS, which is known as the p-type semiconductor. The optimum condition of the graft copolymerization and for the introducing of Cu_xS was determined. The morphology of grafted Nylon film and Cu_xS-introduced Nylon film surface was investigated with SEM. From Energy Dispersion X-ray Analysis, x value of Cu_xS was calculated and also degree of dispersion of Cu_xS into the Nylon film was investigated. The degree of crystallinity was calculated by using DSC. And then the tensile strength and modulus of grafted and Cu_xS-introduced Nylon 6 film was investigated. Electrical conductivity of the Cu_xS-introduced Nylon 6 film was 10^-2 S/cm which is higher by order of 10^-l0 than that of the original Nylon 6 film.