Article
  • Synthesis and Characterization of Photosensitive Polyimides Containing Alicyclic Structure
  • Shim JC, Choi SM, Sim HB, Kwon SH, Yi MH
  • 지방족고리 구조를 함유하는 감광성 폴리이미드 수지의 합성 및 특성 평가
  • 심종천, 최성묵, 심현보, 권수한, 이미혜
Abstract
A new alkali developable photosensitive poly(amic acid) (PAA-0) with transmittance at 400 nm was synthesized from cyclobutane-1,2,3,4-tetracarboxylic dianhydride, 2-(methacryloyloxy)ethyl-3,5-diaminobenzoate and 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyl disiloxane in N-methyl-2-pyrrolidinone. Photosensitivity of the PAA-0 was investigated at 365-400 nm in the presence of a photoinitiator using a high pressure mercury lamp. The photo-cured poly(amic acid) was insoluble toward aqueous 2.38 wt% tetramethylammonium hydroxide solution. Negative pattern of the PAA-0 with 25 μm resolution was obtained by developing with 2.38 wt% tetramethylammonium hydroxide solution after exposure of 600 mJ/cm2 in the presence of 2,2-dimethoxy-2-phenyl- acetophenone as a photoinitiator. The patterned poly(amic acid) was converted to polyimide by thermal curing at 250 ℃ for 50 min, which showed chemical resistance against photoresist stripper as well as good transmittance at 400 nm.

시클로부탄-1,2,3,4-테트라카복실산 이무수물, 2-(메타크릴로일옥시)에틸-3,5-디아미노벤조에이트 및 1,3-비스(3-아미노프로필)-1,1,3,3-테트라메틸디실록산을 N-메틸-2-피롤리돈 하에서 용액 중합 반응시켜 알칼리 수용액에서 현상이 가능할 뿐만 아니라 가시광선 영역에서 우수한 광투과성을 보이는 신규 감광성 폴리이미드 전구체인 폴리암산 (PAA-0)을 제조하였다. 광개시제의 존재 하에서 노광 후 열경화된 폴리이미드 박막은 2.38 wt%의 테트라메틸암모니움 히드록사이드 수용액에 용해되지 않는 특성을 보였으며, 이를 이용하여 광에 의한 미세 화상 형성 연구를 수행하였다. 폴리이미드 전구체 박막의 광반응에 적합한 광개시제는 2, 2-디메톡시-2-페닐아세토페논임을 알 수 있었고, 최적 광량은 400~600 mj/cm2의 범위에 있음이 확인되었다. 감광성 폴리이미드 전구체는 250 ℃의 온도에서 50분간 열경화시킴으로써 투명한 폴리이미드 박막으로 전환이 되었으며, 유기용제를 비롯한 포토레지스트 제거제에 대한 우수한 내용제성 및 가시광선 영역에서의 우수한 광투과 특성을 나타내었다.

Keywords: photosensitive; polyimide; alkali developable; good transmittance; photopatterning; alicyclic chain polymer

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  • Polymer(Korea) 폴리머
  • Frequency : Bimonthly(odd)
    ISSN 0379-153X(Print)
    ISSN 2234-8077(Online)
    Abbr. Polym. Korea
  • 2022 Impact Factor : 0.4
  • Indexed in SCIE

This Article

  • 2004; 28(6): 494-501

    Published online Nov 25, 2004

  • Received on Jul 14, 2004
  • Accepted on Nov 9, 2004