Article
  • E-beam Resist Characteristics of the Plasma Copolymerized MMA-Styrene Thin Films
  • Park J, Lee D
  • 플라즈마 공중합 MMA-Styrene 박막의 E-beam 레지스트 특성
  • 박종관, 이덕출
Abstract
The plasma polymerized thin films of PPMMA and PP(MMA+Sty) were prepared for the application as a positive E-Beam resist in capacitively coupled gas-flow-type reactor using methylmethacrylate and methylmethacrylate-styrene as monomers. These thin films were patterned by the electron-beam apparatus with an acceleration voltage of 30kV and exposure dose ranging from 20 to 900μC/cm2. The growth rates of thin films increased with increasing discharge power and composition of styrene. The etching rate of PPMMA was 440∼820Å4/min, and that of PP(MMA+Sty) was 20∼150Å/min during Ar plasma etching at the discharge power of 100W. In terms of the relative etching rate, PPMMA showed a poor etching charateristics but PP(MMA+Sty) showed better characteristics compared with PMMA.

정전결합 유동가스형 반응관을 사용해서 methylmethacrylate(MMA)와 methylmethacrylate-styrene(MMA+Sty) 모노머를 중합하여 (PPMMA, PP(MMA+Sty)) positive E-beam 레지스트 박막을 제작하였다. 패턴 형성은 30kV의 가속전압으로 조사량(照射量)을 20∼900μC/cm2로 변화시키면서 행하였고, 현상은 박막 제작시 사용한 반응관에서 Ar가스로 수행하였다. 박막의 성장속도는 박막 제작시 방전전력과 스티렌 첨가량의 증가에 따라 증가하였다. E-beam이 조사되지 않은 부분의 에친속도는 100W 현상 방전전력으로 PPMMA는 440∼820Å/min, PP(MMA+Sty)는 20∼150Å/min 이었으며 비에칭율에 있어서 PPMMA는 PMMA보다 다소 낮은 값은 보였지만 PP(MMA+Sty)는 우수한 에칭특성을 나타내었다.

Keywords: electron-beam resist; plasma polymerization; lithography; thin film

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  • Polymer(Korea) 폴리머
  • Frequency : Bimonthly(odd)
    ISSN 0379-153X(Print)
    ISSN 2234-8077(Online)
    Abbr. Polym. Korea
  • 2023 Impact Factor : 0.4
  • Indexed in SCIE

This Article

  • 1994; 18(5): 835-841

    Published online Sep 25, 1994