Microlithographic evaluation was done on chemically amplified positive type deep-UV resist, which is composed of novolac resin as a matrix, tert-butoxycarbonyl(t-BOC) protected phosphazene, TBP as a dissolution inhibitor and triphenylsulfonium hexafluoroantimonate, TPSHFA or mixture of TPSHFA and pyrogallol tris(methane sulfonate), PTMS as photoacid generators. Severe surface insolubilization was shown with photoresist employing TPSHFA, an onium salt, as a photoacid generator, and such problem could be largely alleviated by employing mixture of photoacid generators composed of TPSHFA and PTMS, an organic photoacid generator. It is confirmed that the photoresists employing mixture of TPSHFA and PTMS as photoacid generators show better environmental suability than those

수지를 matrix로 사용하고 tert-butoxycarbonyl(t-BOC)기로 보호된 phosphazene, TBP를 용해억제제로 사용하며 광산발생제로는 triphenylsulfonium hexafluoroantimonate,