Article
  • Surface Modification by Plasma Polymerization 2. Behavior of Plasma Thin Film of Perfluoropropene in Sulfuric Acid Solution
  • Seo ED
  • 플라즈마중합에 의한 표면개질; 2. 황산용액에서 Perfluoropropene (PFP) 플라즈마중합박막의 부식거동
  • 서은덕
Abstract
Perfluoropropene was plasma polymerized on a steel substrate at the system pressure of 140 mTorr with R. F. discharge power of 25 W in a tubular reactor. Polymer deposits were examined with ESCA, SEM, IR, UV, and contact-angle meter to analyze the surface properties and polymer structure. The surface of substrate was modified to be hydrophobic by plasma thin film. The protective barrier performances of the plasma polymers as an interfacial material were evaluated in 0.1M sulfuric acid solution at 60℃. Results of this studios showed that although the corrosion resistances of the samples coated with plasma thin film were much better than those of uncoated ones, the plasma polymerized perfluoropropene polymer (PPFP) from the author's laboratory was very vulnerable in acidic environment. When PPFP coated on a steel substrate was immersed in 60℃, 0.1 M H2SO4 solution, the thin film was separated from substrate within 10 min. The reason for this separation is mainly attributed to partial fragmentation of the film by acrid catalyzed hydration reaction and partly by internal stress.

140 mTorr, 25 W의 RF방전출력하에서 perfluoropropene을 철표면에 플라즈마중합하여 고도의 소수성 박막을 코팅한 후 0.1 M, 60℃ 황산용액에서 플라즈마중합박막의 부식거동을 조사하였다. 박막의 화학적 조성과 표면상태를 조사하기 위하여 ESCA, SEM, IR, UV 및 접촉각측정기를 이용하였으며 박막의 분자구조와 부식과의 상관관계를 조사하였다. Perfluoropropene의 플라즈마중합박막으로 코팅된 시료는 코팅되지 않은 시료에 비하여 내부식성이 우수하였으나 황산용액에서 매우 취약하여 10분이내에 박막이 모두 부식되었다. 이러한 이유는 박막에 존재하는 내부 응력보다는 불포화결합에 대한 산 촉매 수화반응에 기인함을 알 수 있었다.

Keywords: Plasma polymeriztion; thin film; corrosion; hydration

  • Polymer(Korea) 폴리머
  • Frequency : Bimonthly(odd)
    ISSN 0379-153X(Print)
    ISSN 2234-8077(Online)
    Abbr. Polym. Korea
  • 2023 Impact Factor : 0.4
  • Indexed in SCIE

This Article

  • 1995; 19(3): 347-352

    Published online May 25, 1995

  • 10.7317/pk.
  • Received on Nov 30, -0001
  • Revised on Nov 30, -0001
  • Accepted on Nov 30, -0001

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